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K8D1716UTC - 16M-Bit Dual Bank NOR Flash Memory

Datasheet Summary

Description

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16.

The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group.

Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations.
  • Organization 1,048,576 x 16 bit (Word mode).
  • Fast Read Access Time : 70ns.
  • Read While Program/Erase Operation.
  • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb.
  • Secode(Security Code) Block : Extra 64K Byte block.
  • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby M.

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Datasheet Details

Part number K8D1716UTC
Manufacturer Samsung Electronics
File Size 621.81 KB
Description 16M-Bit Dual Bank NOR Flash Memory
Datasheet download datasheet K8D1716UTC Datasheet
Additional preview pages of the K8D1716UTC datasheet.

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www.DataSheet4U.com K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 0.2 1.0 Initial Draft Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Specification finalized Draft Date July 25, 2004 Sep 16, 2004 Nov 29, 2004 Dec 16, 2004 Remark Advance Preliminary Preliminary 1 Revision 1.0 December 2004 www.DataSheet4U.com K8D1716UTC / K8D1716UBC 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.
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