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K8D1716UTC Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K8D1716UTC datasheet preview

Datasheet Details

Part number K8D1716UTC
Datasheet K8D1716UTC K8D1716UBC Datasheet (PDF)
File Size 1.10 MB
Manufacturer Samsung Semiconductor
Description 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC page 2 K8D1716UTC page 3

K8D1716UTC Overview

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability.

K8D1716UTC Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations
  • Organization 1,048,576 x 16 bit (Word mode)
  • Fast Read Access Time : 70ns
  • Read While Program/Erase Operation
  • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb
  • Secode(Security Code) Block : Extra 64K Byte block
  • Power Consumption (typical value @5MHz)
  • Read Current : 14mA
  • Program/Erase Current : 15mA
  • Read While Program or Read While Erase Current : 25mA

K8D1716UTC from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Samsung Electronics Logo K8D1716UTC 16M-Bit Dual Bank NOR Flash Memory Samsung Electronics
Samsung Logo K8D1716UTB 16M Dual Bank NOR Flash Memory Samsung
Samsung Logo K8D1716U 16M Dual Bank NOR Flash Memory Samsung
Samsung Logo K8D1716UBB 16M Dual Bank NOR Flash Memory Samsung
Samsung Electronics Logo K8D1716UBC 16M-Bit Dual Bank NOR Flash Memory Samsung Electronics
Samsung Semiconductor logo - Manufacturer

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K8D1716UTC Distributor

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