K8D1716UTC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

Product Overview

Samsung semiconductor

Part number	K8D1716UTC
Manufacturer	Samsung semiconductor
File Size	1.10 MB
Description	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
Datasheet	K8D1716UTC Datasheet
Note	This datasheet PDF includes multiple part numbers: K8D1716UTC, K8D1716UBC. Please refer to the document for exact specifications by model.
Additional preview pages of the K8D1716UTC datasheet.

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16.

The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group.

Single Voltage, 2.7V to 3.6V for Read and Write operations.
Organization 1,048,576 x 16 bit (Word mode).
Fast Read Access Time : 70ns.
Read While Program/Erase Operation.
Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb.
Secode(Security Code) Block : Extra 64K Byte block.
Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby M.

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Published: Mar 24, 2007 |