K9K2G08U0M-YCB0 Datasheet, Samsung

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + .

such as solid state file storage and other portable applications requiring non-volatility. 3 K9K2G08U0M-VCB0,VIB0,FCB0.

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 211.