* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bi
K9K2G08U0M-V Datasheet (734.52 KB)
K9K2G08U0M-V
Samsung semiconductor
734.52 KB
256m x 8 bit / 128m x 16 bit nand flash memory.
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0.
📁 Related Datasheet
K9K2G08U0M-F 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K2G08U0M-FCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K2G08U0M-FIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K2G08U0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K2G08U0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K2G08U0M-VCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung semiconductor)
K9K2G08U0M-VIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung)
K9K2G08U0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung)
K9K2G08U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung)
K9K2G08U0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung semiconductor)
