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K9NCG08U5M Datasheet FLASH MEMORY

Manufacturer: Samsung Semiconductor

Download the K9NCG08U5M datasheet PDF. This datasheet also includes the K9WB-G08U variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K9WB-G08U-1M.pdf) that lists specifications for multiple related part numbers.

Overview

K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

  • Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
  • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • K9NCG08U5M : 50ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.