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KSE181 - NPN EPITAXIAL SILICON TRANSISTOR

This page provides the datasheet information for the KSE181, a member of the KSE180 NPN EPITAXIAL SILICON TRANSISTOR family.

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Datasheet Details

Part number KSE181
Manufacturer Samsung Semiconductor
File Size 54.29 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet KSE181 Datasheet
Additional preview pages of the KSE181 datasheet.

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Full PDF Text Transcription

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KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC TJ TSTG Rating 60 80 100 40 60 80 7 3 6 1 1.5 12.5 150 -65 ~ 150 Unit V V V V V V V A A A W W   1. Emitter 2. Collector 3.
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