KSE181 datasheet by Fairchild (now onsemi).
| Part number | KSE181 |
|---|---|
| Datasheet | KSE181_FairchildSemiconductor.pdf |
| File Size | 50.53 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | NPN Epitaxial Silicon Transistor |
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KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : KSE182 Collector Cut-off Current : KSE182 Emitter Cut-off Current DC Current Gain Test Condition IC =...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KSE181 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung |
View all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
| KSE180 | NPN Epitaxial Silicon Transistor |
| KSE182 | NPN Epitaxial Silicon Transistor |
| KSE13001 | NPN Epitaxial Silicon Transistor |
| KSE13003 | NPN Silicon Transistor |
| KSE13003T | NPN Silicon Transistor |
| KSE13004 | NPN Silicon Transistor |
| KSE13005 | NPN Silicon Transistor |
| KSE13005F | NPN Silicon Transistor |
| KSE13006 | NPN Silicon Transistor |
| KSE13007 | NPN Silicon Transistor |
