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KSE180/181/182
NPN EPITAXIAL SILICON TRANSISTOR
DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage : KSE180 : KSE181 : KSE182
Collector-Emitter Voltage : KSE180 : KSE181 : KSE182
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC)
Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 )
Junction Temperature Storage Temperature
Symbol VCBO
VCEO
VEBO IC IC IB PC PC TJ TSTG
Rating 60 80
100
40 60 80
7 3 6 1 1.5 12.5 150 -65 ~ 150
Unit V V V
V V V V A A A W W
1. Emitter 2. Collector 3.
KSE180 Datasheet
