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KSE181 Datasheet NPN Epitaxial Silicon Transistor

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

KSE181 Overview

KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 ) VEBO IC IC IB PC PC TJ TSTG Rating 60 80   1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (Tc=25 ) Characteristic Collector Emitter Sustaining Voltage

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