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KSE181 - NPN EPITAXIAL SILICON TRANSISTOR

Download the KSE181 datasheet PDF. This datasheet also covers the KSE180 variant, as both devices belong to the same npn epitaxial silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (KSE180-Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC TJ TSTG Rating 60 80 100 40 60 80 7 3 6 1 1.5 12.5 150 -65 ~ 150 Unit V V V V V V V A A A W W   1. Emitter 2. Collector 3.