K4H1G0638B Datasheet DDR SDRAM stacked 1Gb B-die (x4/x8)

Manufacturer: Samsung Electronics

Datasheet Details

DDR SDRAM st.128Mb x 8 st.256Mb x 4 VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS0 CS1 BA0 BA1 AP/A10

www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev.

1.1 August.

2003 www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) st.

Double-data-rate architecture; two data transfers per clock cycle.
Bidirectional data strobe DQS.
Four banks operation.
Differential clock inputs(CK and CK).
DLL aligns DQ and DQS transition with CK transition.
MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

Part Number	Description
K4H1G0738B	DDR SDRAM stacked 1Gb B-die (x4/x8)