K7B161835B - 512Kx36 & 1Mx18 Synchronous SRAM

Samsung Electronics

The K7B161835B by Samsung Electronics is a 512Kx36 & 1Mx18 Synchronous SRAM. Below is the official datasheet preview.

📥 Download Datasheet

K7B161835B 512Kx36 & 1Mx18 Synchronous SRAM by Samsung Electronics - Datasheet Preview — Official preview page of the **K7B161835B** 512Kx36 & 1Mx18 Synchronous SRAM datasheet (Samsung Electronics).

Datasheet Details

Part number	K7B161835B
Manufacturer	Samsung Electronics
File Size	424.73 KB
Description	512Kx36 & 1Mx18 Synchronous SRAM
Datasheet	K7B161835B_SamsungElectronics.pdf
Additional preview pages of the K7B161835B datasheet.

K7B161835B Product details

Description

The K7B163635B and K7B161835B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 2.5 or 3.3V +/- 5% Power Supply.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
LBO Pin allows a choice of either a interleaved burst or a linear burst.
Three Chip Enables for.

📁 K7B161835B Similar Datasheet

K7B161825A - 512Kx36 & 1Mx18 Synchronous SRAM (Samsung semiconductor)
K7B163625A - 512Kx36 & 1Mx18 Synchronous SRAM (Samsung semiconductor)
K7B321825M - 1Mx36 & 2Mx18 Synchronous SRAM (Samsung semiconductor)
K7B321835C - 1Mx36 & 2Mx18 Synchronous SRAM (Samsung semiconductor)
K7B323625M - 1Mx36 & 2Mx18 Synchronous SRAM (Samsung semiconductor)
K7B323635C - 1Mx36 & 2Mx18 Synchronous SRAM (Samsung semiconductor)
K7B401825B - 128Kx36/x32 & 256Kx18 Synchronous SRAM (Samsung semiconductor)
K7B403225B - 128Kx36/x32 & 256Kx18 Synchronous SRAM (Samsung semiconductor)

Other Datasheets by Samsung Electronics

K7B163635B - 512Kx36 & 1Mx18 Synchronous SRAM

Published: Jun 12, 2010 |