K7B163635B Overview
512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS pliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
K7B163635B Key Features
- Synchronous Operation
- On-Chip Address Counter
- Self-Timed Write Cycle
- On-Chip Address and Control Registers
- VDD= 2.5 or 3.3V +/- 5% Power Supply
- 5V Tolerant Inputs Except I/O Pins
- Byte Writable Function
- Global Write Enable Controls a full bus-width write
- Power Down State via ZZ Signal
- LBO Pin allows a choice of either a interleaved burst or a linear burst
K7B163635B Applications
- Samsung Electronics reserves the right to change products or specification without notice