Datasheet Details
| Part number | K7B161835B |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 424.73 KB |
| Description | 512Kx36 & 1Mx18 Synchronous SRAM |
| Datasheet |
 K7B161835B Datasheet
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General Description
The K7B163635B and K7B161835B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
Key Features
- Synchronous Operation.
- On-Chip Address Counter.
- Self-Timed Write Cycle.
- On-Chip Address and Control Registers.
- VDD= 2.5 or 3.3V +/- 5% Power Supply.
- 5V Tolerant Inputs Except I/O Pins.
- Byte Writable Function.
- Global Write Enable Controls a full bus-width write.
- Power Down State via ZZ Signal.
- LBO Pin allows a choice of either a interleaved burst or a linear burst.
- Three Chip Enables for.