K9F2G08U0B - FLASH MEMORY

Samsung Electronics

Datasheet Details

Part number	K9F2G08U0B
Manufacturer	Samsung Electronics
File Size	862.61 KB
Description	FLASH MEMORY
Datasheet	K9F2G08U0B_SamsungElectronics.pdf

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit.

Voltage Supply - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V.
Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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Published: Nov 1, 2010 |