K9F2G08U0M Datasheet | Samsung Semiconductor

K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 35) Draft Date Sep. 19.2001 Nov. 22. 2002 Remark Advance Preliminary The min. Vcc value 1.8V devices is changed. K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V Mar. 6.2003 Preliminary Few current value is changed. Before K9F2GXXQ0M Typ. ISB2 ILI ILO After K9F2GXXQ0M Typ. ISB2 ILI ILO 10 Max. 50 ±10 ±10 20 Max. 100 ±20 ±20 Apr. 2. 2003 Unit : us K9F2GXXU0M Typ. 20 Max. 100 ±20 ±20 Preliminary K9F2GXXU0M Typ. 10 Max. 50 ±10 ±10 Apr. 9. 2003 Preliminary 1. The 3rd Byte ID after 90h ID read mand is don’ t cared. The 5th Byte ID after 90h ID read mand is deleted. 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 3. Pb-free Package is added. K9F2G08Q0M-PCB0,PIB0 K9F2G08U0M-PCB0,PIB0 K9F2G16U0M-PCB0,PIB0 K9F2G16Q0M-PCB0,PIB0 The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History 1. The value of AC parameters for K9F2G08U0M are changed. ITEM t WC t WP t WH t RC t RP t REH t REA t CEA t ADL K9F2G08U0M Before 45 25 15 50 25 15 30 45 After 30 15 10 30 15 10 18 23 100 Draft Date Apr. 22.2004 Remark Preliminary 2. The definition and value of setup and hold time are changed. ITEM t CLS t CLH t CS t CH t ALS t ALH t DS t...