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K9F2G08U0M - FLASH MEMORY

General Description

Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Key Features

  • Voltage Supply -1.8V device(K9F2GXXQ0M): 1.70V~1.95V -3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array -X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9F2G08X0M): (2K + 64)bit x8bit -X16 device(K9F2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9F2G08X0M) : (2K + 64)bit x8bit -X16 device(K9F2G16X0M) : (1K + 32)bit x16bit.
  • Automatic Program and Erase -.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K9F2G08Q0M FLASH MEMORY
K9F2G16Q0M FLASH MEMORY
K9F2G16U0M FLASH MEMORY
K9F2808Q0B 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-D 16M x 8 Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 35) Draft Date Sep. 19.2001 Nov. 22. 2002 Remark Advance Preliminary 0.2 The min. Vcc value 1.8V devices is changed. K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V Mar. 6.2003 Preliminary 0.3 Few current value is changed. Before K9F2GXXQ0M Typ. ISB2 ILI ILO After K9F2GXXQ0M Typ. ISB2 ILI ILO 10 Max. 50 ±10 ±10 20 Max. 100 ±20 ±20 Apr. 2. 2003 Unit : us K9F2GXXU0M Typ. 20 Max. 100 ±20 ±20 Preliminary K9F2GXXU0M Typ. 10 Max. 50 ±10 ±10 Apr.