K9F2G08B0B Overview
Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.
K9F2G08B0B Key Features
- Voltage Supply
- 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V
- 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
- Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
K9F2G08B0B Applications
- Samsung Electronics reserves the right to change products or specification without notice