Datasheet4U Logo Datasheet4U.com

K9F2G08Q0M - FLASH MEMORY

Datasheet Summary

Description

Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity.

The device is offered in 1.8V or 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Features

  • and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached datasheets are prepared and approved by.

📥 Download Datasheet

Datasheet preview – K9F2G08Q0M

Datasheet Details

Part number K9F2G08Q0M
Manufacturer Samsung semiconductor
File Size 583.49 KB
Description FLASH MEMORY
Datasheet download datasheet K9F2G08Q0M Datasheet
Additional preview pages of the K9F2G08Q0M datasheet.

📁 Similar Datasheet

Other Datasheets by Samsung semiconductor

Full PDF Text Transcription

Click to expand full text
K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 33) The min. Vcc value 1.8V devices is changed. K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added.
Published: |