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K9F2G08R0A - (K9F2G08UxA) Flash Memory

This page provides the datasheet information for the K9F2G08R0A, a member of the K9F2G08U0A (K9F2G08UxA) Flash Memory family.

Datasheet Summary

Description

Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

Features

  • Voltage Supply - 1.65V ~ 1.95V - 2.70V ~ 3.60V.
  • Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25μs(Max. ) - Serial Access : 25ns(Min. ) (.
  • K9F2G08R0A: tRC = 45ns(Min)).
  • Fast Write Cycle Time - Page Program time : 200μs(Typ. ) - Block Erase Time : 1.5ms(T.

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Datasheet preview – K9F2G08R0A

Datasheet Details

Part number K9F2G08R0A
Manufacturer Samsung Electronics
File Size 1.12 MB
Description (K9F2G08UxA) Flash Memory
Datasheet download datasheet K9F2G08R0A Datasheet
Additional preview pages of the K9F2G08R0A datasheet.

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Full PDF Text Transcription

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K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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