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K9F2G08U0B - FLASH MEMORY

Datasheet Summary

Description

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

Features

  • Voltage Supply - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V.
  • Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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Datasheet preview – K9F2G08U0B

Datasheet Details

Part number K9F2G08U0B
Manufacturer Samsung Electronics
File Size 862.61 KB
Description FLASH MEMORY
Datasheet download datasheet K9F2G08U0B Datasheet
Additional preview pages of the K9F2G08U0B datasheet.

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Full PDF Text Transcription

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K9F2G08B0B K9F2G08U0B Preliminary FLASH MEMORY K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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