K9F2G08U0B
K9F2G08U0B is FLASH MEMORY manufactured by Samsung Electronics.
FEATURES
- Voltage Supply
- 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V
- 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
- Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
- Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
- mand Driven Operation
- Unique ID for Copyright Protection
- Package :
- K9F2G08X0B-PCB0/PIB0 : Pb-FREE PACKAGE 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation...
