K9F2G08U0A
K9F2G08U0A is (K9F2G08UxA) Flash Memory manufactured by Samsung Electronics.
FEATURES
- Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
- Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.) (- K9F2G08R0A: t RC = 45ns(Min))
- Fast Write Cycle Time
- Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
- mand Driven Operation
- Intelligent Copy-Back with...
