Samsung Electronics K9F2G08U0A
the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. The I/O pins serve as the ports for address and data input/output as well as command input.| Part No. | K9F2G08U0A |
|---|---|
| Datasheet | K9F2G08U0A Download |
| Manufacturer |  Samsung Electronics |
| Description | Flash Memory |
| Buy | Stock & Price |
FEATURES
● Voltage Supply - 1.65V ~ 1.95V - 2.70V ~ 3.60V● Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit
● Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
● Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25μs(Max.) - Serial Access : 25ns(Min.) (*K9F2G08R0A: tRC = 45ns(Min))
● Fast Write Cycle Time - Page Program time : 200μs(Typ.) - Block Erase Time : 1.5ms(Typ.)
● Command/Address/Data Multiplexed I/O Port
● Hardware Data Protection - Program/Erase Lockout During Power Transitions
● Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years
● Command Driven Operation
● Intelligent Copy-Back with internal 1bit/528Byte EDC
● Unique ID for Copyright Protection
● Package : - K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE 63 - Ball FBGA I (10 x 13 / 0.8 mm pitch) - K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20...
