* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit
* Automatic Program and Erase .

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-b.

K9G8G08U0A

K9G8G08U0A-W000

K9G8G08U0B

K9G8G08B0A

K9G8G08B0B

K9G4G08B0A

K9G4G08U0A

K9GAG08B0D

K9GAG08B0M

K9GAG08U0D

K9GAG08U0E

K9GAG08U0F

K9GAG08U0M