K9G8G08U0M Datasheet - Samsung Electronics

(K9XXG08UXM) Flash Memory

K9G8G08U0M Features

* Voltage Supply : 2.7 V ~ 3.6 V

* Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte

* Page Read Operation - Page Size : (2K + 64)By

K9G8G08U0M General Description

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed i.

K9G8G08U0M Datasheet (1.01 MB)

K9G8G08U0M Datasheet Preview — Preview of K9G8G08U0M PDF

Datasheet Details

Part number:

K9G8G08U0M

Manufacturer:

Samsung Electronics

File Size:

1.01 MB

Description:

(k9xxg08uxm) flash memory.
www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.

📁 Related Datasheet

K9G8G08U0A FLASH MEMORY (Samsung)

K9G8G08U0A-W000 FLASH MEMORY DIE (Samsung)

K9G8G08U0B FLASH MEMORY (Samsung)

K9G8G08B0A FLASH MEMORY (Samsung)

K9G8G08B0B FLASH MEMORY (Samsung)

K9G4G08B0A (K9G4G08U0A / K9G4G08B0A) Flash Memory (Samsung)

K9G4G08U0A (K9G4G08U0A / K9G4G08B0A) Flash Memory (Samsung)

K9GAG08B0D FLASH MEMORY (Samsung)

K9GAG08B0M FLASH MEMORY (Samsung)

K9GAG08U0D FLASH MEMORY (Samsung)

TAGS

K9G8G08U0M K9XXG08UXM Flash Memory Samsung Electronics

Image Gallery

K9G8G08U0M Features

K9G8G08U0M General Description

Datasheet Details

File Size:

Description:

K9G8G08U0M Distributor