K9G8G08U0A-W000 - FLASH MEMORY DIE

Datasheet Summary

Features

Power Supply Voltage : 2.7V ~ 3.6V Organization : (1G+32M) x 8bit May contain up to 100 invalid blocks Functionally Tested Only 256KB Block Erase operation 2KB Page Program/ Read Operation Tray Packing for Chip or Jar Packing for Wafer FLASH MEMORY DIE 1.2 General Physical Specifications.
Backside die surface of polished bare silicon Die Thickness = 725±10um(Bare Wafer) or 200um (Back L.

Samsung

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Datasheet Details

Part number	K9G8G08U0A-W000
Manufacturer	Samsung
File Size	184.55 KB
Description	FLASH MEMORY DIE
Datasheet	K9G8G08U0A-W000 Datasheet
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K9G8G08U0A-W000 FLASH MEMORY DIE K9G8G08U0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

Published: Feb 12, 2014 |