K9G8G08U0A-W000 Overview
K9G8G08U0A-W000 FLASH MEMORY DIE K9G8G08U0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT...
K9G8G08U0A-W000 Key Features
- Power Supply Voltage : 2.7V ~ 3.6V Organization : (1G+32M) x 8bit May contain up to 100 invalid blocks Functionally Test
- Backside die surface of polished bare silicon Die Thickness = 725±10um(Bare Wafer) or 200um (Back Lap) Typical top-level
- 6.0K Angstroms Al
- 0.2% Si + 0.5% Cu position
- Top side passivation
- 1.0K Angstroms PEOX
- 7K Angstroms HDP OX
- 3K Angstroms SiN
- 6.5um PSPI/ 10um Polyimide
- Typical Pad Size : 90.0um x 90.0um
K9G8G08U0A-W000 Applications
- Samsung Electronics reserves the right to change products or specification without notice