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K9G4G08B0A Datasheet (k9g4g08u0a / K9g4g08b0a) Flash Memory

Manufacturer: Samsung Semiconductor

Overview: .. K9L8G08U1A K9G4G08U0A K9G4G08B0A Preliminary FLASH MEMORY K9XXG08XXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Voltage Supply - 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V - 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Pro.

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