Datasheet4U Logo Datasheet4U.com

K9G8G08B0B - FLASH MEMORY

General Description

Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply - 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Progr.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K9G8G08U0M (K9XXG08UXM) Flash Memory Samsung Electronics

Other Datasheets by Samsung Semiconductor

Part Number Description
K9G8G08B0A FLASH MEMORY
K9G8G08U0A FLASH MEMORY
K9G8G08U0A-W000 FLASH MEMORY DIE
K9G8G08U0B FLASH MEMORY
K9G4G08B0A (K9G4G08U0A / K9G4G08B0A) Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K9G8G08B0B K9G8G08U0B Final FLASH MEMORY K9G8G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.