K9G8G08B0B - FLASH MEMORY

Datasheet Summary

Description

Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

Voltage Supply - 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Progr.

Samsung

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Datasheet Details

Part number	K9G8G08B0B
Manufacturer	Samsung
File Size	839.83 KB
Description	FLASH MEMORY
Datasheet	K9G8G08B0B Datasheet
Additional preview pages of the K9G8G08B0B datasheet.

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K9G8G08B0B K9G8G08U0B Final FLASH MEMORY K9G8G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

Published: Mar 15, 2016 |