K9HBG08U1M Datasheet - Samsung Electronics

Flash Memory

K9HBG08U1M Features

* Voltage Supply : 2.7 V ~ 3.6 V

* Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte

* Page Read Operation - Page Size : (2K + 64)By

K9HBG08U1M General Description

Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed .

K9HBG08U1M Datasheet (1.11 MB)

K9HBG08U1M Datasheet Preview — Preview of K9HBG08U1M PDF

Datasheet Details

Part number:

K9HBG08U1M

Manufacturer:

Samsung Electronics

File Size:

1.11 MB

Description:

Flash memory.
www.DataSheet4U.com K9HBG08U1M K9LAG08U0M K9MCG08U5M Advance FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU.

📁 Related Datasheet

K9HAG08U1M Flash Memory (Samsung)

K9HCG08U1D 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)

K9HCG08U1E 16Gb E-die NAND Flash (Samsung)

K9HCG08U1M FLASH MEMORY (Samsung Electronics)

K9HCG08U5D FLASH MEMORY (Samsung)

K9HDG08U5A 32Gb A-die NAND Flash (Samsung)

K9HDG08UXB 32Gb B-die NAND Flash (Samsung)

K9HDGD8S5M-B FLASH MEMORY (Samsung)

K9HDGD8U5M-B FLASH MEMORY (Samsung)

K9HDGD8X5M FLASH MEMORY (Samsung)

TAGS

K9HBG08U1M Flash Memory Samsung Electronics

Image Gallery

K9HBG08U1M Features

K9HBG08U1M General Description

Datasheet Details

File Size:

Description:

K9HBG08U1M Distributor