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K9HBG08U1M - Flash Memory

Product Overview

Samsung Electronics

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K9HBG08U1M Flash Memory by Samsung Electronics - Datasheet Preview — Datasheet preview – K9HBG08U1M

Datasheet Details

Part number	K9HBG08U1M
Manufacturer	Samsung Electronics
File Size	1.11 MB
Description	Flash Memory
Datasheet	K9HBG08U1M Datasheet
Note	This datasheet PDF includes multiple part numbers: K9HBG08U1M, K9LAG-08U. Please refer to the document for exact specifications by model.
Additional preview pages of the K9HBG08U1M datasheet.

Product details

Description

Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
K9MCG08U5M : 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block.

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Published: Oct 9, 2007 |