Samsung Electronics K9HCG08U1M
FLASH MEMORY
| Part No. | K9HCG08U1M |
|---|---|
| Datasheet | K9HCG08U1M Download |
| Manufacturer |  Samsung Electronics |
| Description | FLASH MEMORY |
| Buy | Stock & Price |
FEATURES
● Voltage Supply : 2.7 V ~ 3.6 V● Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit
● Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte
● Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max.) - Serial Access : 25ns(Min.) *K9MDG08U5M: 50ns(Min.)
● Memory Cell : 2bit / Memory Cell
● Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
● Command/Address/Data Multiplexed I/O Port
● Hardware Data Protection - Program/Erase Lockout During Power Transitions
● Reliable CMOS Floating-Gate Technology - Endurance : TBD(with 4bit/512byte ECC) - Data Retention : 10 Years
● Command Register Operation
● Unique ID for Copyright Protection
● Package : - K9LBG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9HCG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9HCG08U1M-ZCB0/ZIB0 : Pb-FREE PACKAGE 48 - Pi...
