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K9HCG08U1M - FLASH MEMORY

Datasheet Summary

Description

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Features

  • Voltage Supply : 2.7 V ~ 3.6 V.
  • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
  • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
  • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
  • K9MDG08U5M: 50ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

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Datasheet Details

Part number K9HCG08U1M
Manufacturer Samsung Electronics
File Size 1.49 MB
Description FLASH MEMORY
Datasheet download datasheet K9HCG08U1M Datasheet
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K9MDG08U5M K9LBG08U0M K9HCG08U1M Preliminary www.DataSheet4U.com FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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