K9HCG08U1D Overview
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K9HCG08U1D Key Features
- Voltage Supply
- 3.3V Device : 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (2G + 109M) x 8bit
- Data Register : (4K + 218) x 8bit
- Automatic Program and Erase
- Page Program : (4K + 218)Byte
- Block Erase : (512K + 27.25K)Byte
- Page Read Operation
- Page Size : (4K + 218)Byte
K9HCG08U1D Applications
- Samsung Electronics reserves the right to change products or specification without notice
