K9HCG08U1E Datasheet | Samsung Semiconductor

Rev. 0.9.1,Mar. 2010 K9GAG08U0E K9LBG08U0E K9HCG08U1E Final 16Gb E-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. -1- Free Datasheet http://../ K9GAG08U0E K9LBG08U0E K9HCG08U1E datasheet History Draft Date Jun. 12, 2009 Oct. 21, 2009 Final Rev. 0.9.1 FLASH MEMORY Revision History Revision No. 0.0 0.1 1. Initial issue 1. Pin configuration is changed. 2. t REA is changed from 20ns to 25ns. 3. Memory cell array is amended. 4. Row address is modified. 5. Dummy busy time for Two-Plane Program(t DBSY) is deleted. 1. Pin configuration is changed. 1. t RC/t WC is changed from 30ns to 20ns. 2. The Parameter related t RC/t WC is changed 1. 52LGA (11x14) QDP is added 1. AC character‘s changed. 1. Part ID K9LBG08U0E and K9HCG08U1E are added. 1. t R 300->400 changed. 2. K9HCG08U5E is deleted. 3.Package...