* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit
* Automatic Program and Erase .

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-b.

K9LAG08U1A

K9LAG08U0M

K9L8G08U1A

K9LBG08U0D

K9LBG08U0E

K9LBG08U0M

K9LBG08U1D

K9LBG08U1M

K9LCG08U0B

K9LCG08U1A

K9LCGD8S1M-B

K9LCGD8U1M-B

K9LCGD8X1M