K9LAG08U1M Datasheet - Samsung Electronics

(K9XXG08UXM) Flash Memory

K9LAG08U1M Features

* Voltage Supply : 2.7 V ~ 3.6 V

* Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte

* Page Read Operation - Page Size : (2K + 64)By

K9LAG08U1M General Description

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed i.

K9LAG08U1M Datasheet (1.01 MB)

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Datasheet Details

Part number:

K9LAG08U1M

Manufacturer:

Samsung Electronics

File Size:

1.01 MB

Description:

(k9xxg08uxm) flash memory.
www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.

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K9LAG08U1M K9XXG08UXM Flash Memory Samsung Electronics

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K9LAG08U1M Features

K9LAG08U1M General Description

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