K9LAG08U1M Datasheet (k9xxg08uxm) Flash Memory

Manufacturer: Samsung Electronics

Overview: www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Datasheet Details

Part number	K9LAG08U1M
Manufacturer	Samsung Electronics
File Size	1.01 MB
Description	(K9XXG08UXM) Flash Memory
Datasheet	K9LAG08U1M_SamsungElectronics.pdf

Key Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).

K9LAG08U1M Distributor & Price

Compare K9LAG08U1M distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	K9LAG08U1A	FLASH MEMORY	Samsung

More Datasheets from Samsung Electronics

Part Number	Description
K9LAG08U0M	Flash Memory
K9LBG08U0M	FLASH MEMORY