1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Revision No History
Draft Date Remark
0.0 1. Initial issue
Feb. 1st 2005 Advance
0.1 1. Cycle time is changed from 35ns to 30ns
Apr. 1st 2005 Advance
2. Technical note is changed.
0.2 1. AC Para. tRHW deleted
Sept. 1. 2005 Advance
2. the power recovery time of minmum is changed from 10µs to 100µs(p38)
0.3 1. Leaded part is eliminated.
2. tR 50us -> 60us (p. 3,12,31)
3. tRHW, tCSD parameter is defined.
4. Technical note is added.(p.16)
Mar. 20th. 2006 Advance
0.4 1. Endurance is changed (10K->5K)
Apr. 20th 2006 Advance
0.5 1. Max. tPROG is changed (2ms->3ms)
0.6 1. Address scramble is added (p.33)
2. Program/Erase Characteristics Note 3 is added(p.11)
Apr. 25th 2006 Advance
June 30th 2006 Preliminary
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to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.