* Voltage Supply - 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V - 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data R.

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation c.

K9LAG08U0M

K9LAG08U1A

K9LAG08U1M

K9LBG08U0D

K9LBG08U0E

K9LBG08U0M

K9LBG08U1D

K9LBG08U1M

K9LCG08U0B

K9LCG08U1A

K9LCGD8S1M-B

K9LCGD8U1M-B

K9LCGD8X1M

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