K9L8G08U1A
Description
Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc.
Key Features
- Voltage Supply - 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V - 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
- Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.)
- Memory Cell : 2bit / Memory Cell
- Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
- Command/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years
- Command Register Operation
