K9L8G08U1A Datasheet - Samsung

Flash Memory

K9L8G08U1A Features

* Voltage Supply - 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V - 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K

K9L8G08U1A General Description

Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte.

K9L8G08U1A Datasheet (912.88 KB)

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K9L8G08U1A

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Samsung

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912.88 KB

Description:

Flash memory.
www.DataSheet4U.com K9L8G08U1A K9G4G08U0A K9G4G08B0A Preliminary FLASH MEMORY K9XXG08XXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO S.

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K9L8G08U1A Features

K9L8G08U1A General Description

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