Datasheet4U.com

K9LBG08U0M - FLASH MEMORY

Samsung Electronics

📥 Download Datasheet

K9LBG08U0M Datasheet Preview — Preview of K9LBG08U0M PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	K9LBG08U0M
Manufacturer	Samsung Electronics
File Size	1.49 MB
Description	FLASH MEMORY
Datasheet	K9LBG08U0M_SamsungElectronics.pdf

K9LBG08U0M Product details

Description

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.

Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
K9MDG08U5M: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

📁 K9LBG08U0M Similar Datasheet

K9LBG08U0D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9LBG08U0E - 16Gb E-die NAND Flash (Samsung)
K9LBG08U1D - FLASH MEMORY (Samsung)
K9LBG08U1M - FLASH MEMORY (Samsung)
K9L8G08U1A - Flash Memory (Samsung)
K9LAG08U1A - FLASH MEMORY (Samsung)
K9LCG08U0B - 32Gb B-die NAND Flash (Samsung)
K9LCG08U1A - 32Gb A-die NAND Flash (Samsung)

Other Datasheets by Samsung Electronics

K9LAG08U0M - Flash Memory
K9LAG08U1M - (K9XXG08UXM) Flash Memory

Published: Sep 7, 2010 |