Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed
www.DataSheet4U.com K9HBG08U1M K9LAG08U0M K9MCG08U5M Advance FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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1.
K9LAG08U0M Features
* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
* Page Read Operation - Page Size : (2K + 64)By
Datasheet Details
K9LAG08U0M, K9LAG-08U
Samsung Electronics
1.11 MB
Flash memory.
This datasheet PDF includes multiple part numbers: K9LAG08U0M, K9LAG-08U.
Please refer to the document for exact specifications by model.
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