K9LBG08U0D Datasheet, Memory, Samsung semiconductor

✔ K9LBG08U0D Features

Voltage Supply - 3.3V Device : 2.7V ~ 3.6V
Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit
Automatic Program and Erase - P

✔ K9LBG08U0D Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense

PDF File Details

Samsung semiconductor manufacturer logo

Part number:

K9LBG08U0D

Manufacturer:

Samsung semiconductor

File Size:

1.68 MB

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📄 Datasheet

Description:

4g x 8 bit/ 8g x 8 bit/ 16g x 8 bit nand flash memory. Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit. The device is offered in 3.3V Vcc. Its NAND

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K9LBG08U0D Bit Bit 16G Bit NAND Flash Memory Samsung semiconductor