K9LBG08U1M Datasheet - Samsung

K9LBG08U1M FLASH MEMORY

Offered in 2Gx8bit, the K9GAG08X0M is a 16G-bit NAND Flash Memory with spare 512M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,224-byte .

K9GAG08B0M K9GAG08U0M K9LBG08U1M Preliminary FLASH MEMORY K9XXG08UXM www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND..

K9LBG08U1M Features

* Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V www.DataSheet4U.com - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit

* Automatic Program and Erase - Page Program : (4K + 128)Byte - Bloc

K9LBG08U1M_Samsung.pdf