K9LBG08U1M Datasheet - Samsung

K9LBG08U1M - FLASH MEMORY

Offered in 2Gx8bit, the K9GAG08X0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

A program operation can be performed in typical 800µs on the 4,224-byte

K9GAG08B0M K9GAG08U0M K9LBG08U1M Preliminary FLASH MEMORY K9XXG08UXM www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

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K9LBG08U1M Features

* Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V www.DataSheet4U.com - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit

* Automatic Program and Erase - Page Program : (4K + 128)Byte - Bloc

K9LBG08U1M_Samsung.pdf