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KM23V32000E - (KM23x32000xTY) 32M-Bit CMOS Mask ROM

Download the KM23V32000E datasheet PDF. This datasheet also covers the KM23S32000D variant, as both devices belong to the same (km23x32000xty) 32m-bit cmos mask rom family and are provided as variant models within a single manufacturer datasheet.

Description

The KM23V32000D(E)TY and KM23S32000D(E)TY are fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device opera

Features

  • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode).
  • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max. ) 2.5V Operation : 150ns(Max. ).
  • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E)TY : single +2.5V.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM23S32000D_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KM23V32000D(E)TY/KM23S32000D(E)TY 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E)TY : single +2.5V • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -.
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