Description
The KM23V32000D(E)TY and KM23S32000D(E)TY are fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with low power supply, and all inputs and outputs are TTL compatible.
Features
- Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode).
- Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max. ) 2.5V Operation : 150ns(Max. ).
- Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E)TY : single +2.5V.
- Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
- Fully static operation.
- All inputs and outputs TTL compatible.
- Three state outputs.
- Package -. K.
KM23S32000D_SamsungSemiconductor.pdf