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M366S0823CT0 - SDRAM DIMM

General Description

The Samsung M366S0823CT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S0823CT0 consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Key Features

  • /Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.4/0.4 1.4 tr/tf = 1/1 1.4 See.

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Full PDF Text Transcription for M366S0823CT0 (Reference)

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M366S0823CT0 M366S0823CT0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Sam...

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K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823CT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CT0 consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the www.DataSheet4U.com printed circuit board in parallel for each SDRAM. The M366S0823CT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control

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