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K1B6416B6C - 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

Description

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data.

SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.

Features

  • www. DataSheet4U. com UtRAM.

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Datasheet preview – K1B6416B6C

Datasheet Details

Part number K1B6416B6C
Manufacturer Samsung Semiconductor
File Size 827.26 KB
Description 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
Datasheet download datasheet K1B6416B6C Datasheet
Additional preview pages of the K1B6416B6C datasheet.

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Full PDF Text Transcription

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K1B6416B6C Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Revised - Deleted Deep Power Down Mode support Revised - Changed product code from K1B6416B7C into K1B6416B6C Draft Date March 11, 2004 Remark Advance 0.1 April 19, 2004 Advance 0.2 May 10, 2004 Advance 0.3 Revised September 1, 2004 Preliminary - Filled out Package type(54ball FBGA 6.0mm x 8.0mm) - Changed Hi-Z parameters(tCHZ, tOHZ, tBHZ, tWZ) from Max.7ns into Max.12ns and changed tHZ from Max.10ns into Max.12ns - Updated "Fig.
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