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K4F661612E Datasheet, Samsung semiconductor

K4F661612E ram equivalent, (k4f641612e / k4f661612e) 4m x 16bit cmos dynamic ram.

K4F661612E Avg. rating / M : 1.0 rating-12

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K4F661612E Datasheet

Features and benefits

of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-v.

Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low po.

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