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K4F661612B - 4M x 16bit CMOS Dynamic RAM

Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Datasheet preview – K4F661612B

Datasheet Details

Part number K4F661612B
Manufacturer Samsung
File Size 844.31 KB
Description 4M x 16bit CMOS Dynamic RAM
Datasheet download datasheet K4F661612B Datasheet
Additional preview pages of the K4F661612B datasheet.

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Full PDF Text Transcription

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K4F661612B,K4F641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4F661612B-TC/L(3.3V, 8K Ref.
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