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K4F661612B - 4M x 16bit CMOS Dynamic RAM

General Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Full PDF Text Transcription for K4F661612B (Reference)

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K4F661612B,K4F641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mo...

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a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Ident

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