K4F661612E Datasheet ((K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM)

Part: K4F661612E
Manufacturer: Samsung Semiconductor
Size: 445.72 KB

K4F661612E Key Features

Part Identification
K4F661612E-TI/P(3.3V, 8K Ref.)
K4F641612E-TI/P(3.3V, 4K Ref.)
Fast Page Mode operation
2CAS Byte/Word Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability
LVTTL(3.3V) patible inputs and outputs

Other K4F661612E Datasheets

Manufacturer	Part Number	Description
Samsung Semiconductor	K4F661612B	4M x 16bit CMOS Dynamic RAM
Samsung Semiconductor	K4F661612C	4M x 16bit CMOS Dynamic RAM

K4F661612E Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er) are optional.