Download the K4F661612E datasheet PDF.
This datasheet also covers the K4F641612E variant, as both devices belong to the same (k4f641612e / k4f661612e) 4m x 16bit cmos dynamic ram family and are provided as variant models within a single manufacturer datasheet.
General Description
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
Key Features
of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. CMOS DRAM.
Note: The manufacturer provides a single datasheet file (K4F641612E_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for K4F661612E (Reference)
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K4F661612E. For precise diagrams, and layout, please refer to the original PDF.
( DataSheet : www.DataSheet4U.com ) Industrial Temperature K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,30...
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namic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power con
K4F661612E Datasheet
