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K4F661612E Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4F661612E datasheet preview

Datasheet Details

Part number K4F661612E
Datasheet K4F661612E K4F641612E Datasheet (PDF)
File Size 445.72 KB
Manufacturer Samsung Semiconductor
Description (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM
K4F661612E page 2 K4F661612E page 3

K4F661612E Overview

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er) are optional.

K4F661612E Key Features

  • Part Identification
  • K4F661612E-TI/P(3.3V, 8K Ref.)
  • K4F641612E-TI/P(3.3V, 4K Ref.)
  • Fast Page Mode operation
  • 2CAS Byte/Word Read/Write operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Self-refresh capability (L-ver only)
  • Fast parallel test mode capability
  • LVTTL(3.3V) patible inputs and outputs

K4F661612B from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Samsung Logo K4F661612B 4M x 16bit CMOS Dynamic RAM Samsung
Samsung Logo K4F661612C 4M x 16bit CMOS Dynamic RAM Samsung
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

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Part Number Description
K4F641612E (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM

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