K4M51163LE sdram equivalent, 8m x 16bit x 4 banks mobile sdram.
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.
ORDERING INFORMATION
Part No. K4M51163LE-Y(P)C/L/F80 K4M51163LE-Y(P)C/L/F1H K4M51163LE-Y(P)C/L/F1L Max Freq. 125MHz(CL.
The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
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