K4M56323PG-F - 2M x 32Bit x 4 Banks Mobile SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4M56323PG-F
Manufacturer	Samsung semiconductor
File Size	184.11 KB
Description	2M x 32Bit x 4 Banks Mobile SDRAM
Datasheet	K4M56323PG-F Datasheet
Additional preview pages of the K4M56323PG-F datasheet.

Product details

Description

The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung semiconductor

K4M56323PG-FE - 2M x 32Bit x 4 Banks Mobile SDRAM
K4M56323PG-C - 2M x 32Bit x 4 Banks Mobile SDRAM
K4M56323PG-G - 2M x 32Bit x 4 Banks Mobile SDRAM
K4M563233E - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233G - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
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Published: Dec 23, 2009 |