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  Samsung Electronic Components Datasheet  

K4M56323PG-F Datasheet

2M x 32Bit x 4 Banks Mobile SDRAM

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K4M56323PG-F(H)E/G/C/F
Mobile-SDRAM
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
FEATURES
• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
-. DPD (Deep Power Down)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
GENERAL DESCRIPTION
The K4M56323PG is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
Max Freq.
K4M56323PG-F(H)E/G/C/F75
133MHz(CL=3), 83MHz(CL2)
K4M56323PG-F(H)E/G/C/F90
111MHz(CL=3), 83MHz(CL2)
K4M56323PG-F(H)E/G/C/F1L
www.DataSheet4U.com
111MHz(CL=3)*1, 66MHz(CL2)
- F(H)E/G : Normal/ Low Power, Extended Temperature(-25°C ~ 85°C)
- F(H)C/F : Normal/ Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
Interface
LVCMOS
Package
90 FBGA Pb
(Pb Free)
Address configuration
Organization
8Mx32
Bank
BA0,BA1
Row
A0 - A11
Column Address
A0 - A8
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-
visions may apply.
January 2006


  Samsung Electronic Components Datasheet  

K4M56323PG-F Datasheet

2M x 32Bit x 4 Banks Mobile SDRAM

No Preview Available !

K4M56323PG-F(H)E/G/C/F
FUNCTIONAL BLOCK DIAGRAM
Mobile-SDRAM
Bank Select
Data Input Register
CLK
ADD
2M x 32
2M x 32
2M x 32
2M x 32
Column Decoder
LCKE
LRAS
LCBR
LWE
LCAS
Latency & Burst Length
Programming Register
LWCBR
Timing Register
CLK CKE CS RAS CAS WE DQM
LWE
LDQM
DQi
LDQM
www.DataSheet4U.com
January 2006


Part Number K4M56323PG-F
Description 2M x 32Bit x 4 Banks Mobile SDRAM
Maker Samsung semiconductor
Total Page 12 Pages
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