Description
The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Features
- 3.0V & 3.3V power supply.
- LVCMOS compatible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- DQM for masking.
- Auto & self refresh.
- 64ms refresh period (4K cycle).
K4M563233D Datasheet
