K4M563233E
K4M563233E is 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA manufactured by Samsung Semiconductor.
FEATURES
- 3.0V & 3.3V power supply.
- LVCMOS patible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
- EMRS cycle with address key programs.
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh)
- DQM for masking.
- Auto refresh.
- -
- - 64ms refresh period (4K cycle). mercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 2Chips DDP 90Balls FBGA with 0.8mm ball pitch ( -MXXX : Leaded, -EXXX : Lead Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4M563233E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. e Data She
ORDERING INFORMATION
Part No. K4M563233E-M(E)E/N/G/C/L/F75 K4M563233E-M(E)E/N/G/C/L/F80 K4M563233E-M(E)E/N/G/C/L/F1H K4M563233E-M(E)E/N/G/C/L/F1L
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Max Freq. 133MHz(CL=3) 125MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)- 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package
- M(E)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)
- M(E)C/L/F : Normal / Low / Low Power, mercial Temperature(-25°C ~ 70°C)
NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as ponents in...
