K4M563233G Datasheet | Samsung Semiconductor

FEATURES - 3.0V & 3.3V power supply. - LVCMOS patible with multiplexed address. - Four banks operation. - MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). - EMRS cycle with address key programs. - All inputs are sampled at the positive going edge of the system clock. - Burst read single-bit write operation. - Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) - DQM for masking. - Auto refresh. - - - - 64ms refresh period (4K cycle). mercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M563233G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4M563233G-F(H)N/G/L/F60 K4M563233G-F(H)N/G/L/F75 K4M563233G-F(H)N/G/L/F7L- 1 . Max Freq. 166MHz(CL=3) 133MHz(CL=3), 111MHz(CL=2) 133MHz(CL=3), 83MHz(CL=2) LVCMOS Interface Package 90 FBGA Pb (Pb Free) Data Shee - F(H)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - F(H)L/F : Low Power, mercial Temperature(-25°C ~ 70°C) NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. Address configuration Organization 8Mx32 Bank BA0,BA1 Row A0 - A11 Column Address A0 - A8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR...