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K4S56163LF-XN Datasheet, Samsung semiconductor

K4S56163LF-XN Datasheet, sdram equivalent, Samsung semiconductor

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K4S56163LF-XN sdram equivalent

  • 4m x 16bit x 4 banks mobile sdram.
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PDF File Details

Part number: K4S56163LF-XN

Manufacturer: Samsung semiconductor

File Size: 143.57KB

Download: 📄 Datasheet

Description: 4M x 16Bit x 4 Banks Mobile SDRAM

📥 Download PDF (143.57KB) Datasheet Preview: K4S56163LF-XN

PDF File Details

Part number: K4S56163LF-XN

Manufacturer: Samsung semiconductor

File Size: 143.57KB

Download: 📄 Datasheet

Description: 4M x 16Bit x 4 Banks Mobile SDRAM

K4S56163LF-XN Features and benefits

K4S56163LF-XN Features and benefits


* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

K4S56163LF-XN Application

K4S56163LF-XN Application

ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L M.

K4S56163LF-XN Description

K4S56163LF-XN Description

The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

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TAGS

K4S56163LF-XN
16Bit
Banks
Mobile
SDRAM
Samsung semiconductor

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