K4S643233F-SDI

The K4S643233F-SDI is 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM designed by Samsung semiconductor.

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S643233F-SDI, K4S643233F-SE
Manufacturer	Samsung semiconductor
File Size	90.62 KB
Description	2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
Datasheet	K4S643233F-SE_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4S643233F-SDI, K4S643233F-SE. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S643233F-SDI datasheet.

Product details

Description

The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to.

📁 Similar Datasheet

K4S643232H-TC-L50 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L55 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L60 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L70 - 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-UC-L50 - 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L55 - 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L60 - 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L70 - 2M x 32 SDRAM (Samsung)

Other Datasheets by Samsung semiconductor

K4S643233F-SDE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDP - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SI - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Published: Mar 25, 2010 |