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K4S643233F-SE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

General Description

The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

Key Features

  • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to.

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📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S643233F-SDE 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDI 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDN 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDP 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SI 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

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www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to 85 °C). Industrial temperature operation ( -40° C to 85° C).