• Part: K524G2GACB-A050
  • Description: 4Gb NAND Flash + 2Gb Mobile DDR
  • Manufacturer: Samsung Semiconductor
  • Size: 1.95 MB
Download K524G2GACB-A050 Datasheet PDF
K524G2GACB-A050 page 2
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K524G2GACB-A050 Key Features

  • Operating Temperature : -25°C ~ 85°C
  • Package : 137-ball FBGA Type
  • 10.5 x 13 x 1.2mmt, 0.8mm pitch <NAND Flash>
  • Voltage Supply : 1.7V ~ 1.95V
  • Organization
  • Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP
  • Data Register : (1K + 32) x 16bit
  • Automatic Program and Erase
  • Page Program : (1K + 32)Word
  • Block Erase : (64K + 2K)Word